PART |
Description |
Maker |
IRG4BC15UD-SPBF |
(IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRG4BC15UD-S |
(IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Powerex, Inc.
|
IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor POWEREX[Powerex Power Semiconductors]
|
QM75DY-24B |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|